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CS630A8H - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS630A8H
Manufacturer Huajing Microelectronics
File Size 714.89 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS630A8H Datasheet

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Silicon N-Channel Power MOSFET CS630 A8H ○R General Description: CS630 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 83 0.23 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features: l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier.