CS6N60A4TY - Silicon N-Channel Power MOSFET

Product Overview

Huajing Microelectronics

Datasheet Details

Part number	CS6N60A4TY
Manufacturer	Huajing Microelectronics
File Size	422.04 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS6N60A4TY Datasheet
Additional preview pages of the CS6N60A4TY datasheet.

Product details

Description

CS6N60 A4TY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

l Fast Switching l Low ON Resistance(Rdson≤1.7Ω) l Low Gate Charge (Typical Data: 17nC) l Low Reverse transfer capacitances(Typical: 2.7pF) l 100% Single Pulse avalanche energy Test VDSS ID PD(TC=25℃) RDS(ON)Typ 600 V 6A 85 W 1.4 Ω.

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Published: Dec 6, 2016 |