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CS6N70A3D-G - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:15.5nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS6N70A3D-G
Manufacturer Huajing Microelectronics
File Size 237.46 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS6N70A3D-G Datasheet

Full PDF Text Transcription for CS6N70A3D-G (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS6N70A3D-G. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS6N70 A3D-G ○R General Description： CS6N70 A3D-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technol...

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nel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:15.5nC) l Low Reverse transfer capacitances(Typical:6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.

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