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Silicon N-Channel Power MOSFET
CS6N80F A9
○R
General Description：
CS6N80F A9, the silicon N-channel Enhanced VDMOSFETs, is
obtained by the self-aligned planar Technology which reduce the
conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various
power switching circuit for system miniaturization and higher
efficiency. The package form is TO-220F, which accords with
the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:35nC) l Low Reverse transfer capacitances(Typical:15pF) l 100% Single Pulse avalanche energy Test
Applications：
Atx Power、LED Power.
CS6N80FA9 Datasheet
