CS730FA9RD - Silicon N-Channel Power MOSFET

Huajing Microelectronics

General Description

and enhance the avalanche energy.

Key Features

l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test.

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CS730FA9RD silicon n-channel power mosfet by Huajing Microelectronics - Datasheet Preview

Datasheet Details

Part number	CS730FA9RD
Manufacturer	Huajing Microelectronics
File Size	190.03 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	CS730FA9RD Datasheet

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Silicon N-Channel Power MOSFET CS730F A9RD ○R General Description： CS730F A9RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance VDSS ID PD(TC=25℃) RDS(ON)Typ 400 6 30 0.75 and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor.