GENERAL DESCRIPTION
： CS740 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. FEATURES
： l Fast Switching l Low ON Resistance(Rdson≤0.50Ω) l Low Gate Charge (Typical Data:32nC) l Low Reverse transfer capacitances(Typical:17pF) l 100% Single Pulse avalanche energy Test APPLICATIONS
： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering VDSS ID PD (TC=25℃) RDS(ON)Typ 400 10 160 0.36 Rating 400 10 6.2 40 ±30 424 5 160 1.28 150，–55 to 150 300 V A W Ω Units V A A A V mJ V/ns W W/℃ ℃ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD.
Huajing Microelectronics
