CS75N75B8H Datasheet | Huajing Microelectronics

Silicon N-Channel Power MOSFET CS75N75 B8H ○R General Description： CS75N75 B8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 75 100 230 10.2 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features ： l Fast Switching l Low ON Resistance(Rdson≤11.5 mΩ) l Low Gate Charge (Typical Data:71nC) l Low Reverse transfer capacitances(Typical:40pF) l 100% Single Pulse avalanche energy...