CS7N65A4TDY datasheet by Huajing Microelectronics.
| Part number | CS7N65A4TDY |
|---|---|
| Datasheet | CS7N65A4TDY-HuajingMicroelectronics.pdf |
| File Size | 758.83 KB |
| Manufacturer | Huajing Microelectronics |
| Description | Silicon N-Channel Power MOSFET |
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： CS7N65 A4TDY, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 650 7 95 1.1 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS...
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| CS7N65A4R | Silicon N-Channel Power MOSFET |
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| CS7N65A3R | Silicon N-Channel Power MOSFET |
| CS7N65A3TDY | Silicon N-Channel Power MOSFET |
| CS7N65A8HD | Silicon N-Channel Power MOSFET |
| CS7N65FA9D | Silicon N-Channel Power MOSFET |
| CS7N65FA9R | Silicon N-Channel Power MOSFET |
| CS7N65FA9TDY | Silicon N-Channel Power MOSFET |
| CS7N60A3R | Silicon N-Channel Power MOSFET |
| CS7N60A4R | Silicon N-Channel Power MOSFET |
