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CS8N90A8 - Silicon N-Channel Power MOSFET

General Description

switching performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data:49nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number CS8N90A8
Manufacturer Huajing Microelectronics
File Size 647.36 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet CS8N90A8 Datasheet

Full PDF Text Transcription for CS8N90A8 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CS8N90A8. For precise diagrams, and layout, please refer to the original PDF.

Silicon N-Channel Power MOSFET CS8N90 A8 ○R General Description： CS8N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology wh...

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hanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD (TC=25℃) RDS(ON)Typ 900 8 130 1.2 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220AB, which accords with the RoHS standard. Features： l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data:49nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and

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