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Silicon N-Channel Power MOSFET
CS8N90 A8
○R
General Description：
CS8N90 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve
VDSS ID PD (TC=25℃) RDS(ON)Typ
900 8
130 1.2
switching performance and enhance the avalanche energy. The
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. The package form is
TO-220AB, which accords with the RoHS standard.
Features：
l Fast Switching l Low ON Resistance(Rdson≤1.5Ω) l Low Gate Charge (Typical Data:49nC) l Low Reverse transfer capacitances(Typical:12pF) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger.
CS8N90A8 Datasheet
