Datasheet4U Logo Datasheet4U.com

IRFU214BA3HD - Silicon N-Channel Power MOSFET

General Description

performance and enhance the avalanche energy.

Key Features

  • l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 8.0nC) l Low Reverse transfer capacitances(Typical: 8pF) l 100% Single Pulse avalanche energy Test.

📥 Download Datasheet

Datasheet Details

Part number IRFU214BA3HD
Manufacturer Huajing Microelectronics
File Size 268.89 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet IRFU214BA3HD Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFU214B 250V N-Channel MOSFET Fairchild Semiconductor
IRFU214 N-Channel Power MOSFETs Intersil Corporation
IRFU214 Power MOSFET International Rectifier
IRFU214 Power MOSFET Vishay Siliconix
IRFU214 N-Channel MOSFET INCHANGE

Other Datasheets by Huajing Microelectronics

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon N-Channel Power MOSFET IRFU214B A3HD ○R General Description： IRFU214B A3HD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 8.0nC) l Low Reverse transfer capacitances(Typical: 8pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger.