GENERAL DESCRIPTION
： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. FEATURES
： l Fast Switching l Low ON Resistance(Rdson≤3.5 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test APPLICATIONS
： Power switch circuit of adaptor and charger. VDSS ID（Silicon limited current） ID（Package limited） PD RDS(ON)Typ 30 V 150 A 90 A 120.1 W 2.4 mΩ Absolute（TC= 25℃ unless otherwise specified） Symbol Parameter VDSS ID IDMa1 VGS EAS a2 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Avalanche Energy Power Dissipation Derating Factor above 25°C Operating Junction and Storage Temperature Range MaximumTemperature for Soldering Rating 30 150 104 600 ±20 328 120.1 0.96 150，–55 to 150 300 Units V A A A V mJ W W/℃ ℃ ℃ WUXI CHI NA RESOURCES HUAJ I NG M I CROELECTRONI CS C O., LTD.
Huajing
