H1300
H1300 is PNP SILICON TRANSISTOR manufactured by Huashan.
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
ABSOLUTE MAXIMUM RATINGS Ta=25
TO-92
Tstg Storage Temperature Tj Junction Temperature PC Collector Dissipation VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICP Collector Current Pulse
-55~150 150
750m W -20V -10V -6V -2A -5A
1 Emitter E 2 Collector C 3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage
-20
V IC=-100 A, IE=0
BVCEO Collector-Emitter Breakdown Voltage
-10
V IC=-10m A, IB=0
BVEBO Emitter-Base Breakdown Voltage
-6
V IE=-1m A IC=0
HFE(1) DC Current Gain
140 600 VCE=-1V, IC=-500m A
HFE(2)
70 VCE=-1V, IC=-2A
VCE(sat) Collector- Emitter Saturation Voltage
-0.5 V IC=-2A, IB=-50m A
VBE Base-Emitter...
