HB857
HB857 is PNP SILICON TRANSISTOR manufactured by Huashan.
Shantou Huashan Electronic Devices Co.,Ltd.
PNP SILICON TRANSISTOR
APPLICATIONS
LOW FREQUENCY POWER AMPLIFIER
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature Tj Junction Temperature PC Collector Dissipation Tc=25 VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current DC
55~150 150 40W -70V -50V -5V -4A
TO-220
1 Base B
2 Collector C 3 Emitter, E
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO BVCEO BVEBO ICBO HFE 1 HFE 2 VCE(sat) VBE(on) ft
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current
DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter On Voltage
Current Gain-Bandwidth Product
IC=-10 A, IE=0 IC=-50m A, IB=0 IE=-10 A IC=0 VCB=-50V, IE=0 VCE=-4V, IC=-1A VCE=-4V, IC=-0.1A IC=-2A, IB=-0.2A VCE=-4V, IC=-1A VCE=-4V, IC=-0.5A, h FE...
