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Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
HX3199
█ APPLICATIONS
Small power amplifier.
█ ABSOLUTE MAXIMUM RATINGS（Ta=25℃）
Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………200mW VCBO——Collector-Base Voltage………………………………50V VCEO——Collector-Emitter Voltage……………………………50V VEBO——Emitter-Base Voltage………………………………5V IC——Collector Current……………………………………150mA
TO-92S
1―Emitter，E 2―Collector，C 3―Base，B
█ ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Characteristics
Min Typ Max Unit
Test Conditions
BVCBO Collector-Base Breakdown Voltage 50
V IC=10μA, IE=0
BVCEO Collector-Emitter Breakdown Voltage
50
V IC=100μA, IB=0
ICBO Collector Cut-off Current
0.
HX3199 Datasheet
