HGA170N10A
Feature
◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial
Part Number HGA170N10A
Package Marking TO-220F GA170N10A
P-1
100V N-Ch Power MOSFET
VDS RDS(on),typ VGS=10V ID (Sillicon Limited)
100 17.5 20
V m W A
TO-220F
Drain Gate
Src
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃
- L=0.4m H, TC=25℃ TC=25℃
- Absolute Maximum Ratings Parameter
Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case
Symbol Rq JA Rq JC
Value
Unit
20...
