HGB105N15S Datasheet | Hunteck

Feature ◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free 150V N-Ch Power MOSFET VDS RDS(on),typ TO-263 RDS(on),typ TO-220 ID (Sillicon Limited) 150 V 9 m W 9.3 m W 104 A Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial Drain Gate TO-263 TO-220 Src Part Number HGB105N15S HGP105N15S Package Marking TO-263 GB105N15S TO-220 GP105N15S Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ - L=0.4m H, TC=25℃ TC=25℃ - Absolute Maximum Ratings Parameter Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Symbol Rq JA Rq JC Value Unit 104 A ±20 320 m J -55 to175 ℃ Max Unit ℃/W...