HGD110N08A
Feature
◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
80V N-Ch Power MOSFET
VDS RDS(on),typ ID (Sillicon Limited)
80 V 9.6 m W 51 A
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial
TO-252
Part Number HGD110N08A HGI110N08A
Package Marking TO-252 GD110N08A TO-251 GI110N08A
2 13
TO-251
1 23
Drain Pin2
Gate Pin 1
Src Pin3
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃
- L=0.4m H, TC=25℃ TC=25℃
- Absolute Maximum Ratings Parameter
Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case
Symbol Rq JA...
