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HGN023NE6AL
Feature ◇ High Speed Power Switching,Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial
P-1
65V N-Ch Power MOSFET
VDS
RDS(on),typ
VGS=10V
RDS(on),typ
VGS=4.5V
ID (Sillicon Limited)
ID (Package Limited)
65 V 2.
HGN023NE6AL Datasheet
