HGP029NE4SL Datasheet | Hunteck

Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control TO-263 VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) ID (Package Limited) TO-220 2.2 mΩ 2.9 mΩ 2.5 mΩ 3.2 mΩ Drain Pin2 Gate Pin 1 Src Part Number Package Marking Pin3 HGB029NE4SL TO-263 GB029NE4SL HGP029NE4SL TO-220 GP029NE4SL Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Continuous Drain Current (Package Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ TC=25℃ L=0.5m H, TC=25℃ TC=25℃ - Absolute Maximum Ratings Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Symbol RθJC RθJA Value Unit 182 A ±20 100 m...