HGP045NE4SL Datasheet | Hunteck

Feature ◇ Optimized for high speed switching, Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ Power Tools ◇ UPS ◇ Motor Control VDS RDS(on),typ VGS=10V RDS(on),typ VGS=4.5V ID (Sillicon Limited) 45 3.5 4.6 114 V mΩ mΩ A TO-220 Drain Gate Src Part Number Package Marking HGP045NE4SL TO-220 GP045NE4SL Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ L=0.3m H, TC=25℃ TC=25℃ - Absolute Maximum Ratings Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Symbol RθJC RθJA Value Unit 114 A ±20 60 m J -55 to175 ℃ Max Unit ℃/W ℃/W...