HGS090NE6AL
Feature
◇ High Speed Power Switching,Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
P-1
68V N-Ch Power MOSFET
RDS(on),typ
VGS=10V
RDS(on),typ
VGS=4.5V
ID (Sillicon Limited)
68 V 7.5 m W 10.2 m W 14 A
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial
SOIC-8
Drain Gate
Src
Part Number
Package Marking
HGS090NE6AL SOIC-8 GS090NE6AL
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃
- L=0.4m H, TC=25℃ TC=25℃
- Pin 1
Value
Unit
14...
