HGS110N08A
Feature
◇ High Speed Power Switching ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial
P-1
80V N-Ch Power MOSFET
VDS RDS(on),typ ID (Sillicon Limited)
80 V 9.6 m W 12 A
SOIC-8
Drain Gate
Src
Part Number HGS110N08A
Package Marking SOIC-8 GS110N08A
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃
- L=0.4m H, TC=25℃ TC=25℃
- Pin 1
Value
Unit
12 A
±20
45 m J
-55 to150...
