HTJ450N02
Feature
◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial
Part Number HTJ450N02
Package SOT23
Marking 1Y
P-1
20V N-Ch Power MOSFET
20 V
RDS(on),typ VGS=4.5V 36 mΩ
RDS(on),typ VGS=2.5V 43 mΩ
RDS(on),typ VGS=1.8V 58 mΩ
ID (Sillicon Limited)
3.6 A
SOT-23
Drain Gate
Src
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Power Dissipation Operating and Storage Temperature
VDS VGS IDM PD TJ, Tstg
TA=25℃ TA=100℃ TA=25℃
- Absolute Maximum Ratings Parameter
Thermal Resistance Junction-Ambient
Symbol RθJA
Value
Unit
3.6 A
±12
-55 to150
℃
Max
Unit...
