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HTM200P03 - 30V P-Ch Power MOSFET

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Part number HTM200P03
Manufacturer Hunteck
File Size 879.35 KB
Description 30V P-Ch Power MOSFET
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HTM200P03 Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free P-1 30V P-Ch Power MOSFET VDS -30 RDS(on),typ VGS=-10V 17.5 RDS(on),typ VGS=-4.5V 26 ID (Sillicon Limited) -18 V mΩ mΩ A Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial DFN3x3 Drain Gate Part Number HTM200P03 Package Marking DFN3*3 TM200P03 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature ID VDS VGS IDM EAS PD TJ, Tstg TA=25℃ TA=70℃ L=0.
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