Click to expand full text
HTM200P03
Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
P-1
30V P-Ch Power MOSFET
VDS
-30
RDS(on),typ VGS=-10V 17.5
RDS(on),typ VGS=-4.5V 26
ID (Sillicon Limited)
-18
V mΩ mΩ A
Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial
DFN3x3
Drain Gate
Part Number HTM200P03
Package Marking DFN3*3 TM200P03
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM EAS PD TJ, Tstg
TA=25℃ TA=70℃ L=0.