HTN030N03 Datasheet | Hunteck

Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free P-1 30V N-Ch Power MOSFET VDS RDS(on),typ VGS=10V ID (Sillicon Limited) 30 V 2.5 mΩ 75 A Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Teles and Inductrial DFN5x6 Drain Gate Part Number HTN030N03 Package Marking DFN5x6 TN030N03 Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified) Parameter Symbol Conditions Continuous Drain Current (Silicon Limited) Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature VDS VGS IDM EAS PD TJ, Tstg TC=25℃ TC=100℃ L=0.1m H, TC=25℃ TC=25℃ - Pin 1 S S S G Src Value Unit 75 A ±20 168 m J -55 to150 ℃ Absolute Maximum Ratings Parameter Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Symbol RθJA RθJC Max Unit ℃/W...