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HTN030N03
Feature ◇ High Speed Power Switching, Logic Level ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free
P-1
30V N-Ch Power MOSFET
VDS RDS(on),typ VGS=10V ID (Sillicon Limited)
30 V 2.5 mΩ 75 A
Application ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Telecoms and Inductrial
DFN5x6
Drain Gate
Part Number HTN030N03
Package Marking DFN5x6 TN030N03
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
Parameter
Symbol
Conditions
Continuous Drain Current (Silicon Limited)
Drain to Source Voltage Gate to Source Voltage Pulsed Drain Current Avalanche Energy, Single Pulse Power Dissipation Operating and Storage Temperature
ID
VDS VGS IDM EAS PD TJ, Tstg
TC=25℃ TC=100℃ L=0.