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HX8205 - Dual N-Channel Enhancement Mode Power MOSFET

General Description

The HX8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 19.5V,ID = 4A RDS(ON).

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Datasheet Details

Part number HX8205
Manufacturer Husintent
File Size 544.83 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HX8205 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HX8205 Dual N-Channel Enhancement Mode Power MOSFET Description The HX8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 4A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.