H5TC2G83FFR-xxL Datasheet | SK Hynix

2Gb DDR3L SDRAM 2Gb DDR3L SDRAM Lead-Free&Halogen-Free (Ro HS pliant) H5TC2G83FFR-xx A H5TC2G83FFR-xx I H5TC2G83FFR-xx L H5TC2G83FFR-xx J H5TC2G63FFR-xx A H5TC2G63FFR-xx I H5TC2G63FFR-xx L H5TC2G63FFR-xx J - SK Hynix reserves the right to change products or specifications without notice. Rev. 1.0 / Nov. 2012 1 Revision History Revision No. 1.0 History Official version release Draft Date Nov. 2012 Remark Rev. 1.0 / Nov. 2012 Description The H5TC2G83FFR-xx A(I,L,J) and H5TC2G63FFR-xx A(I,L,J) are a 2Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides backward patibility with the 1.5V DDR3 based environment without any changes. SK Hynix 2Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the clock (falling edges of the clock), data, data strobes and write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth. Device Features and Ordering Information Features - VDD=VDDQ=1.35V + 0.100 / - 0.067V - Fully differential clock inputs (CK, CK) operation - Differential Data Strobe (DQS, DQS) - On chip DLL align DQ, DQS and DQS transition with CK transition - DM masks write data-in at the both rising and falling edges of the data strobe - All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock - Programmable CAS latency 6, 7, 8, 9, 10, 11, 12 and 13 supported - Programmable additive latency 0, CL-1, and CL-2 supported - Programmable CAS Write latency (CWL) = 5, 6, 7, 8 - Programmable burst length 4/8 with both nibble sequential and interleave mode - BL switch on the fly - 8banks - Average Refresh Cycle (Tcase...