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H5TQ8G43AMR-xxC

Manufacturer: SK Hynix
H5TQ8G43AMR-xxC datasheet preview

Datasheet Details

Part number H5TQ8G43AMR-xxC
Datasheet H5TQ8G43AMR-xxC_HynixSemiconductor.pdf
File Size 903.94 KB
Manufacturer SK Hynix
Description 8Gb DDR3 SDRAM
H5TQ8G43AMR-xxC page 2 H5TQ8G43AMR-xxC page 3

H5TQ8G43AMR-xxC Overview

SK hynix 8Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

H5TQ8G43AMR-xxC Key Features

  • VDD=VDDQ=1.5V +/- 0.075V
  • Fully differential clock inputs (CK, CK) operation
  • 8banks
  • Average Refresh Cycle (Tcase of 0 oC~ 95 oC)
  • Differential Data Strobe (DQS, DQS)
  • 7.8 µs at 0oC ~ 85 oC
  • 3.9 µs at 85oC ~ 95 oC
  • On chip DLL align DQ, DQS and DQS transition with CK  transition
  • JEDEC standard 78ball FBGA(x4/x8), 96ball FBGA(x16
  • DM masks write data-in at the both rising and falling 
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