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HMA425S6AFR6N Datasheet Ddr4 Sdram So-dimm

Manufacturer: SK Hynix

Overview: 260pin DDR4 SDRAM SODIMM DDR4 SDRAM SO-DIMM Based on 4Gb A-die HMA425S6AFR6N HMA451S6AFR8N HMA451S7AFR8N HMA41GS6AFR8N HMA41GS7AFR8N *SK hynix reserves the right to change products or specifications without notice. Rev. 1.7 / Mar.2016 1 Revision History Revision No. 0.1 0.2 0.21 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 History Initial Release Changed development plan Module dimension Update (Detail-A : 0.125->1.125) IDD Specification update Changed maximum VDDSPD from 2.75V to 3.6 Revised CWL value Corrected Pin Assignments Added development plan (1Rx16) Changed Module Dimension Updated JEDEC Specification Deleted Speed Grade Table Updated IDD Specification(1Rx16) Updated 2133Mbps (tCK(min) : 0.938ns->0.937ns) Updated JEDEC Specification Draft Date Dec.2014 Jan.2015 Feb.2015 May.2015 Jun.2015 Jul.2015 Aug.2015 Oct.2015 Dec.2015 Dec.2015 Mar.2016 Remark Rev. 1.7 / Mar.

General Description

SK hynix Unbuffered Small Outline DDR4 SDRAM DIMMs (Unbuffered Small Outine Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use DDR4 SDRAM devices.

These DDR4 SDRAM Unbuffered Small Outline DIMMs are intended for use as main memory when installed in systems such as micro servers and mobile personal putres.

Key Features

  • Power Supply: VDD=1.2V (1.14V to 1.26V).
  • VDDQ = 1.2V (1.14V to 1.26V).
  • VPP - 2.5V (2.375V to 2.75V).
  • VDDSPD=2.25V to 3.6V.
  • Functionality and operations comply with the DDR4 SDRAM datasheet.
  • 16 internal banks.
  • Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or dif- ferent bank group accesses are available.
  • Data transfer rates: PC4-2400,PC4-2133, PC4-1866, PC4-1600.
  • Bi-Dire.

More Datasheets from SK Hynix

Part Number Description
HMA41GS6AFR8N DDR4 SDRAM SO-DIMM
HMA41GS7AFR8N DDR4 SDRAM SO-DIMM
HMA451S6AFR8N DDR4 SDRAM SO-DIMM
HMA451S7AFR8N DDR4 SDRAM SO-DIMM

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