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HMT31GR7AMP4C Datasheet

Manufacturer: SK Hynix

This datasheet includes multiple variants, all published together in a single manufacturer document.

HMT31GR7AMP4C datasheet preview

Datasheet Details

Part number HMT31GR7AMP4C
Datasheet HMT31GR7AMP4C HMT112R7AFP8C Datasheet (PDF)
File Size 1.66 MB
Manufacturer SK Hynix
Description DDR3 SDRAM Registered DIMM
HMT31GR7AMP4C page 2 HMT31GR7AMP4C page 3

HMT31GR7AMP4C Overview

1.1.

HMT31GR7AMP4C Key Features

  • VDD=VDDQ=1.5V
  • VDDSPD=3.3V to 3.6V
  • Fully differential clock inputs (CK, CK) operation
  • Differential Data Strobe (DQS, DQS)
  • On chip DLL align DQ, DQS and /DQS transition with CK transition
  • DM masks write data-in at the both rising and falling edges of the data strobe
  • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock
  • Programmable additive latency 0, CL-1, and CL-2 sup ported
  • Programmable CAS Write latency (CWL) = 5, 6, 7, 8
  • Programmable burst length 4/8 with both nibble sequential and interleave mode
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