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HMT325U6BFR8C - DDR3 SDRAM

General Description

Hynix Unbuffered DDR3 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3 SDRAM devices.

Key Features

  • VDD=1.5V +/- 0.075V.
  • VDDQ=1.5V +/- 0.075V.
  • VDDSPD=3.0V to 3.6V.
  • Functionality and operations comply with the DDR3 SDRAM datasheet.
  • 8 internal banks.
  • Data transfer rates: PC3-10600, PC3-8500, or PC3-6400.
  • Bi-directional Differential Data Strobe.
  • 8 bit pre-fetch.
  • Burst Length (BL) switch on-the-fly: BL 8 or BC (Burst Chop) 4.
  • Supports ECC error correction and detection.
  • On Die Termination (ODT) supp.

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Full PDF Text Transcription for HMT325U6BFR8C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HMT325U6BFR8C. For precise diagrams, and layout, please refer to the original PDF.

240pin DDR3 SDRAM Registered DIMM DDR3 SDRAM Unbuffered DIMMs Based on 2Gb B-Die HMT325U6BFR8C HMT325U7BFR8C HMT351U6BFR8C HMT351U7BFR8C * Hynix Semiconductor reserves th...

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5U7BFR8C HMT351U6BFR8C HMT351U7BFR8C * Hynix Semiconductor reserves the right to change products or specifications without notice. Rev. 0.2 / Feb. 2010 1 Free Datasheet http://www.datasheet4u.com/ Revision History Revision No. 0.1 0.2 History Initial Release Added IDD Specification Draft Date Dec. 2009 Feb. 2010 Remark Rev. 0.2 / Feb. 2010 2 Free Datasheet http://www.datasheet4u.com/ Description Hynix Unbuffered DDR3 SDRAM DIMMs (Unbuffered Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules that use Hynix DDR3 SDRAM devices.

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