HY27UH084G2M
FEATURES
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout patibility for all densities FAST BLOCK ERASE
- Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE
- Manufacturer Code
- Device Code SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V : HY27UHXX4G2M CHIP ENABLE DON'T CARE OPTION
- Simple interface with microcontroller AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download SERIAL NUMBER OPTION HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions DATA INTEGRITY
- 100,000 Program/Erase cycles
- 10 years Data Retention PACKAGE
- HY27(U/S)H(08/16)4G2M-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27(U/S)H(08/16)4G2M-T (Lead)
- HY27(U/S)H(08/16)4G2M-TP (Lead Free)
- 1.8V device: VCC = 1.7 to 1.95V : HY27SHXX4G2M Memory Cell Array = (2K+ 64) Bytes x 64 Pages x 4,096 Blocks = (1K+32) Words x 64...
