HY27US08561A
FEATURES
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
..
- Pinout patibility for all densities
FAST BLOCK ERASE
- Block erase time: 2ms (Typ.) STATUS REGISTER ELECTRONIC SIGNATURE
- 1st cycle : Manufacturer Code
- 2nd cycle: Device Code
SUPPLY VOLTAGE
- 3.3V device: VCC = 2.7 to 3.6V
: HY27USXX561A
CHIP ENABLE DON'T CARE
- Simple interface with microcontroller AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download SERIAL NUMBER OPTION HARDWARE DATA PROTECTION
- Program/Erase locked during Power transitions DATA INTEGRITY
- 100,000 Program/Erase cycles (with 1bit/512byte ECC)
- 10 years Data Retention PACKAGE
- HY27(U/S)S(08/16)561A-T(P) : 48-Pin TSOP1 (12 x 20 x 1.2 mm)
- HY27(U/S)S(08/16)561A-T (Lead)
- HY27(U/S)S(08/16)561A-TP (Lead Free)
- HY27(U/S)S(08/16)561A-S(P) : 48-Pin USOP1 (12 x 17 x 0.65 mm)
- HY27(U/S)S(08/16)561A...
