HY27US16121B
description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
Rev 0.5 / Jul. 2007
HY27US(08/16)12(1/2)B Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
Document Title
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory
Revision History
Revision No. 0.0 0.1 0.2
History
Initial Draft.
1) Correct Figure 14 & 15
1) Add AC Characteristics
- t RB : Last RE High to busy (at sequential read)
- t CRY : CE High to Ready (in case of interception by CE at read)
- t CEH : CE High Hold Time (at the last serial read) 1) Add sequential row read feature and figure 2) Modify Block Replacement 1) Add x16 Characteristics 2) Modify read2 operation (sequential row read) 3) Add AC Characteristics
- t OH : RE or CE High to...
