Download the HY27US16561M datasheet PDF.
This datasheet also covers the HY27US08561M variant, as both devices belong to the same (hy27xsxx561m) 256mbit (32mx8bit / 16mx16bit) nand flash family and are provided as variant models within a single manufacturer datasheet.
General Description
of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) 1) change FBGA dimension : Thickness : 1.2mm(max) -> 1.0mm(max) 2) Edit Fig.33 read operation with CE don't care 1) Change TSOP1,WSOP1,FBGA package dimension 0.6 - Change TSOP1,WSOP1,FBGA mechan
Note: The manufacturer provides a single datasheet file (HY27US08561M_HynixSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for HY27US16561M (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
HY27US16561M. For precise diagrams, and layout, please refer to the original PDF.
HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Document Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision Histo...
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Title 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash Memory Revision History No. www.DataSheet4U.com 0.0 0.1 0.2 Initial Draft Renewal Product Group Append 1.8V Operation Product to Data sheet Insert Spare Enable function for GND Pin(#6) - In case of Reading or Programming, GND Pin(#6) should be Low or High. - Change the test condition of Stand-by current-Refer to Table 13. Change CSP Package name & thickness - Name : VFBGA -> FBGA - Thickness : 1.0mm(max) -> 1.2mm(max) 1) Delete Cache Program Mode 2) Modify the description of Device Operations - /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23
HY27US16561M Datasheet
