HY27US561M
HY27US561M is 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash manufactured by SK Hynix.
description of Device Operations
- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled(Enabled) (Page23) 1) change FBGA dimension : Thickness : 1.2mm(max) -> 1.0mm(max) 2) Edit Fig.33 read operation with CE don't care 1) Change TSOP1,WSOP1,FBGA package dimension 0.6
- Change TSOP1,WSOP1,FBGA mechanical data
- Inches parameter has been excluded from the mechanical data table 1) Change TSOP1, WSOP1, FBGA package dimension 2) Edit TSOP1, WSOP1 package figures 3) Change FBGA package figure
Mar. 08. 2004
Preliminary
Jun. 01. 2004
Preliminary
Sep. 24. 2004
Preliminary
Oct. 18. 2004
Preliminary
Oct. 20. 2004
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 0.7 / Oct. 2004 1
HY27SS(08/16)561M Series HY27US(08/16)561M Series 256Mbit (32Mx8bit / 16Mx16bit) NAND Flash FEATURES
SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
- Cost effective solutions for mass storage applications
FAST BLOCK ERASE
- Block erase time: 2ms (Typ)
NAND INTERFACE
- x8 or x16 bus width.
- Multiplexed Address/ Data
- Pinout patibility for all densities
STATUS REGISTER ELECTRONIC SIGNATURE
SUPPLY VOLTAGE
CHIP ENABLE DON'T CARE OPTION
- Simple interface with microcontroller
..
- 3.3V device: VCC = 2.7 to 3.6V : HY27USXX561M
- 1.8V device: VCC = 1.7 to 1.95V : HY27SSXX561M
AUTOMATIC PAGE 0 READ AT POWER-UP OPTION
- Boot from NAND support
- Automatic Memory Download
Memory Cell Array
- 256Mbit = 528 Bytes x 32 Pages x 2,048...
