HY29F080R12
FEATURES n 5 Volt Read, Program, and Erase
- Minimizes system-level power requirements n High Performance
- Access times as fast as 70 ns n Low Power Consumption
- 15 m A typical active read current
- 30 m A typical program/erase current
- 5 µA maximum CMOS standby current n patible with JEDEC Standards
- Package, pinout and mand-set patible with the single-supply Flash device standard
- Provides superior inadvertent write protection n Sector Erase Architecture
- Sixteen equal size sectors of 64K bytes each
- A mand can erase any bination of sectors
- Supports full chip erase n Erase Suspend/Resume
- Temporarily suspends a sector erase operation to allow data to be read from, or programmed into, any sector not being erased n Sector Group Protection
- Sectors may be locked in groups of two to prevent program or erase operations within that sector group n Temporary Sector Unprotect
- Allows changes in locked sectors (requires high voltage on RESET# pin) n Internal Erase Algorithm
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