HY29F080T12 Key Features
- Minimizes system-level power requirements n High Performance
- Access times as fast as 70 ns n Low Power Consumption
- 15 mA typical active read current
- 30 mA typical program/erase current
- 5 µA maximum CMOS standby current n patible with JEDEC Standards
- Package, pinout and mand-set patible with the single-supply Flash device standard
- Provides superior inadvertent write protection n Sector Erase Architecture
- Sixteen equal size sectors of 64K bytes each
- A mand can erase any bination of sectors
- Supports full chip erase n Erase Suspend/Resume