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HY29LV800B-90I Datasheet

Manufacturer: SK Hynix
HY29LV800B-90I datasheet preview

Datasheet Details

Part number HY29LV800B-90I
Datasheet HY29LV800B-90I_HynixSemiconductor.pdf
File Size 556.65 KB
Manufacturer SK Hynix
Description 8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
HY29LV800B-90I page 2 HY29LV800B-90I page 3

HY29LV800B-90I Overview

Word-wide data (x16) appears on DQ[15:0] and byte-wide (x8) data appears on DQ[7:0]. The HY29LV800 can be programmed and erased in-system with a single 3 volt VCC supply. Internally generated and regulated voltages are provided for program and erase operations, so that the device does not require a higher voltage VPP power supply to perform those functions.

HY29LV800B-90I Key Features

  • Read, program and erase operations from 2.7 to 3.6 volts
  • Ideal for battery-powered

HY29LV800B-90I Applications

  • 70 and 90 ns access time versions for full voltage range operation
  • 55 ns access time version for operation from 3.0 to 3.6 volts Ultra-low Power Consumption (Typical Values)
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HY29LV800B-90I Distributor

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