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HY531000A - 1M X 1 Fast Page Mode

General Description

This family is a 1M bit dynamic RAM organized 1,048,576 x 1-bit configuration with Fast Page mode CMOS DRAMs.

Fast Page mode offers high speed of random access memory within the same row.

The circuit and process design allow this device to achieve high performance and low power dissipation.

Key Features

  • are access time(60, 70 or 80ns) and power consumption (Normal or Low power). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability.

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Full PDF Text Transcription for HY531000A (Reference)

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HY531000A 1Mx1, Fast Page mode www.DataSheet4U.com DESCRIPTION This family is a 1M bit dynamic RAM organized 1,048,576 x 1-bit configuration with Fast Page mode CMOS DRAM...

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rganized 1,048,576 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(60, 70 or 80ns) and power consumption (Normal or Low power). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability. FEATURES Ÿ Fast Page Mode operation Ÿ Read-modify-write Capability Ÿ TTL compatible inputs and outputs Ÿ /CAS-before-/RAS, /RAS-only,

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