HY531000A
DESCRIPTION
This family is a 1M bit dynamic RAM organized 1,048,576 x 1-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time(60, 70 or 80ns) and power consumption (Normal or Low power). Hyundai’s advanced circuit design and process technology allow this device to achieve high bandwidth, low power consumption and high reliability.
FEATURES
Ÿ Fast Page Mode operation Ÿ Read-modify-write Capability Ÿ TTL patible inputs and outputs Ÿ /CAS-before-/RAS, /RAS-only, Hidden and Self refresh capability Ÿ Max. Active power dissipation Speed 60 70 80 Ÿ Refresh cycle Part number HY531000A Refresh 512 Normal 8ms L-part 64ms Power 467m W 412m W 357m W Ÿ JEDEC standard pinout Ÿ 20/26-pin SOJ (300mil) Ÿ Single power supply of 5V ± 10% Ÿ Early Write or output enable controlled write Ÿ Fast...
