HY57V161610FT-6 Datasheet PDF (16Mb Synchronous DRAM) | Download Hynix Semiconductor HY57V161610FT-6

HY57V161610FT-6 - 16Mb Synchronous DRAM

This page provides the datasheet information for the HY57V161610FT-6, a member of the HY57V161610FT-xx 16Mb Synchronous DRAM family.

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

Voltage: VDD, VDDQ 3.3V supply voltage All device pins are compatible with LVTTL interface JEDEC standard 400mil 50pin TSOP-II with 0.8mm of pin pitch (Lead or Lead Free Package) All inputs and outputs referenced to positive edge of system clock Data mask function by UDQM, LDQM Internal two banks operation.
Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable Burst Length.

Datasheet Details

Part number	HY57V161610FT-6
Manufacturer	Hynix Semiconductor
File Size	152.01 KB
Description	16Mb Synchronous DRAM
Datasheet	HY57V161610FT-6 Datasheet
Additional preview pages of the HY57V161610FT-6 datasheet.

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Full PDF Text Transcription

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16Mb Synchronous DRAM based on 512K x 2Bank x16 I/O Document Title 2Bank x 512K x 16bits Synchronous DRAM Revision History Revision No. 0.1 1.0 History Initial Draft Final Revision Draft Date Feb. 2006 Apr. 2006 Remark Preliminary www.DataSheet4U.com This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.0 / Apr. 2006 1 Synchronous DRAM Memory 16Mbit (1Mx16bit) HY57V161610FT(P)-xx(I) Series 11 DESCRIPTION THE Hynix HY57V161610F-Series is a 16,777,216-bits CMOS Synchronous DRAM, ideally suited for the main memory and graphic applications which require large memory density and high bandwidth.

Published: Jul 12, 2014 |