HY57V561620FLT-H - 256M (16M x 16bit) Hynix SDRAM Memory

This page provides the datasheet information for the HY57V561620FLT-H, a member of the HY57V561620FT-6 256M (16M x 16bit) Hynix SDRAM Memory family.

Product Overview

Hynix Semiconductor

Part number	HY57V561620FLT-H
Manufacturer	Hynix Semiconductor
File Size	727.86 KB
Description	256M (16M x 16bit) Hynix SDRAM Memory
Datasheet	HY57V561620FLT-H Datasheet
Additional preview pages of the HY57V561620FLT-H datasheet.

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use of circuits described.

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Standard SDRAM Protocol.
Internal 4bank operation.
Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V.
All device pins are compatible with LVTTL interface.
Low Voltage interface to reduce I/O power.
8,192 Refresh cycles / 64ms.
Programmable CAS latency of 2 or 3.
Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst.
0oC ~ 70oC Operation.
Package Type : 54_Pin TSOPII (Lead Free,.

Other Datasheets by Hynix Semiconductor

HY57V561620FLT-5 - 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLT-6 - 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLTP-5 - 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLTP-6 - 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FLTP-H - 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FT-5 - 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FT-6 - 256M (16M x 16bit) Hynix SDRAM Memory
HY57V561620FT-H - 256M (16M x 16bit) Hynix SDRAM Memory

Published: Nov 27, 2015 |