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HY57V561620FT-6 - 256M (16M x 16bit) Hynix SDRAM Memory

General Description

and is subject to change without notice.

use of circuits described.

No patent licenses are implied.

Key Features

  • Standard SDRAM Protocol.
  • Internal 4bank operation.
  • Power Supply Voltage : VDD = 3.3V, VDDQ = 3.3V.
  • All device pins are compatible with LVTTL interface.
  • Low Voltage interface to reduce I/O power.
  • 8,192 Refresh cycles / 64ms.
  • Programmable CAS latency of 2 or 3.
  • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or full page for Sequential Burst - 1, 2, 4 or 8 for Interleave Burst.
  • 0oC ~ 70oC Operation.
  • Package Type : 54_Pin TSOPII (Lead Free,.

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Full PDF Text Transcription for HY57V561620FT-6 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for HY57V561620FT-6. For precise diagrams, and layout, please refer to the original PDF.

256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 4,194,304 x 16 This document is a genera...

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rray - Organized as 4banks of 4,194,304 x 16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.2 / Dec. 2009 1 111 Synchronous DRAM Memory 256Mbit HY57V561620F(L)T(P) Series Document Title 256Mbit (16M x16) Synchronous DRAM Revision History Revision No. 0.1 0.2 0.3 History Initial Draft Define : Current value (Page 11 ~ 12) 1. Cerrect : 1-1. 4Banks x 2Mbits x32 --> 4Banks x 4Mbits x16(Ordering information; Page 06). 1-2. VDDQ / VSSQ : Power supply for output buffers (Page 08).

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