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HY57V64820HG Datasheet

4 Banks X 2m X 8bit Synchronous Dram

Manufacturer: SK Hynix

HY57V64820HG Overview

The Hynix HY57V64820HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V64820HG is organized as 4banks of 2,097,152x8. HY57V64820HG is offering fully synchronous operation referenced to a positive edge of the clock.

HY57V64820HG Key Features

  • Single 3.3±0.3V power supply All device pins are patible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0
  • Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full page for Sequential Burst
  • 1, 2, 4 or 8 for Interleave Burst Programmable CAS Latency ; 2, 3 Clocks

More Datasheets from SK Hynix

Part Number Description
HY57V648010 8Mx8 bit Synchronous DRAM Series
HY57V648011 8Mx8 bit Synchronous DRAM Series
HY57V648020 8Mx8 bit Synchronous DRAM Series
HY57V648021 8Mx8 bit Synchronous DRAM Series
HY57V641620ET 4-Bank x 1M x 16-Bits SDRAM
HY57V641620HG 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG-I 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM
HY57V643220D 4 Bank x 512K x 32-Bit SDRAM
HY57V64420HG 4 Banks x 4M x 4Bit Synchronous DRAM

HY57V64820HG Distributor