HY57V64820HG - 4 Banks x 2M x 8Bit Synchronous DRAM

Product Overview

Hynix Semiconductor

Datasheet Details

Part number	HY57V64820HG
Manufacturer	Hynix Semiconductor
File Size	172.94 KB
Description	4 Banks x 2M x 8Bit Synchronous DRAM
Datasheet	HY57V64820HG Datasheet
Additional preview pages of the HY57V64820HG datasheet.

HY57V64820HG Product details

Description

The Hynix HY57V64820HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V64820HG is organized as 4banks of 2,097,152x8.

Features

Single 3.3±0.3V power supply All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM Internal four banks operation.
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst.
- 1, 2, 4 o.

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Published: Nov 22, 2009 |