HY57V651620B - 4 Banks x 1M x 16Bit Synchronous DRAM

Product Overview

Hynix Semiconductor

Datasheet Details

Part number	HY57V651620B
Manufacturer	Hynix Semiconductor
File Size	81.92 KB
Description	4 Banks x 1M x 16Bit Synchronous DRAM
Datasheet	HY57V651620B Datasheet
Additional preview pages of the HY57V651620B datasheet.

HY57V651620B Product details

Description

The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.

HY57V641620HG is organized as 4banks of 1,048,576x16.

Features

Single 3.3±0.3V power supply Note).
Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full page for Sequential Burst All device pins are compatible with LVTTL interface JEDEC standard 400mil 54pin TSOP-II with 0.8mm of pin pitch.
All inputs and outputs referenced to positive edge of system clock - 1, 2, 4 or 8 for Interleave Burst.
Programmable CAS Lat.

📁 Similar Datasheet

HY57V641620FTP - Synchronous DRAM Memory 64Mbit (Hynix)
HY57V641620LTP - Synchronous DRAM Memory 64Mbit (Hynix)
HY57V641620STP - Synchronous DRAM Memory 64Mbit (Hynix)
HY57V28420BLT - 4Banks x 8M x 4bits Synchronous DRAM (Hynix)
HY57V28420BT - 4Banks x 8M x 4bits Synchronous DRAM (Hynix)
HY57V561620BLT-H - DRAM (Pioneer)
HY5-P - Current Transducers HY 5 to 25-P (LEM)
HY50-P - Current Transducer HY 50-P (LEM)
HY5002 - 1-chip composed of high-current totem pole (HAWYANG)
HY5012A - N-Channel Enhancement Mode MOSFET (HOOYI)

Other Datasheets by Hynix Semiconductor

HY57V658010 - 8Mx8 bit Synchronous DRAM Series
HY57V658011 - 8Mx8 bit Synchronous DRAM Series
HY57V658020 - 8Mx8 bit Synchronous DRAM Series
HY57V658020B - 4 Banks x 2M x 8Bit Synchronous DRAM
HY57V658021 - 8Mx8 bit Synchronous DRAM Series
HY57V641620ET - 4-Bank x 1M x 16-Bits SDRAM
HY57V641620HG - 4 Banks x 1M x 16Bit Synchronous DRAM
HY57V641620HG-I - 4 Banks x 1M x 16Bit Synchronous DRAM

Published: Apr 2, 2005 |