HY57V651620B Overview
The Hynix HY57V641620HG is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620HG is organized as 4banks of 1,048,576x16. H Y 5 7 V 6 4 1 6 2 0 H G i s o f f e r i n g f u l l y s y n c h r o n o u s o p e r a t i o n r e f e r e n c e d t o a p o s i t i v e e d g e o f t h e c l o c k.
HY57V651620B Key Features
- Single 3.3±0.3V power supply
- Auto refresh and self refresh 4096 refresh cycles / 64ms Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or Full page for Sequential Burst
- All inputs and outputs referenced to positive edge of system clock
- 1, 2, 4 or 8 for Interleave Burst
- Programmable CAS Latency ; 2, 3 Clocks