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HY5DU561622AT

Manufacturer: SK Hynix

HY5DU561622AT datasheet by SK Hynix.

HY5DU561622AT datasheet preview

HY5DU561622AT Datasheet Details

Part number HY5DU561622AT
Datasheet HY5DU561622AT_HynixSemiconductor.pdf
File Size 529.85 KB
Manufacturer SK Hynix
Description (HY5DU56xx22A(L)T) 256M-S DDR SDRAM
HY5DU561622AT page 2 HY5DU561622AT page 3

HY5DU561622AT Overview

and is subject to change without notice. Hynix semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5DU561622AT Key Features

  • VDD, VDDQ = 2.5V +/- 0.2V All inputs and outputs are patible with SSTL_2 interface Fully differential clock inputs (CK,
  • data transaction aligned to bidirectional data strobe (DQS)
  • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Progr
  • Internal four bank operations with single pulsed /RAS x16 device has two bytewide data strobes (UDQS, . LDQS) per each x
  • tRAS Lock-out function supported Data outputs on DQS edges when read (edged DQ)
  • Auto refresh and Self refresh supported Data inputs on DQS centers when write (centered DQ)
  • 8192 refresh cycles / 64ms On chip DLL align DQ and DQS transition with CK transition DM mask write data-in at the both
  • JEDEC standard 400mil 66pin TSOP-II with 0.65mm pin pitch Full and Half strength driver option controlled by EMRS

HY5DU561622CTP from other manufacturers

View HY5DU561622CTP datasheet index

Brand Logo Part Number Description Other Manufacturers
Hynix Logo HY5DU561622CTP 256M gDDR SDRAM Hynix
SK Hynix logo - Manufacturer

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