HY5DU561622DT - (HY5DU56xx22DT) 256Mb DDR SDRAM

This page provides the datasheet information for the HY5DU561622DT, a member of the HY5DU56422DT (HY5DU56xx22DT) 256Mb DDR SDRAM family.

Product Overview

Hynix Semiconductor

Part number	HY5DU561622DT
Manufacturer	Hynix Semiconductor
File Size	268.63 KB
Description	(HY5DU56xx22DT) 256Mb DDR SDRAM
Datasheet	HY5DU561622DT Datasheet
Additional preview pages of the HY5DU561622DT datasheet.

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ES VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +/- 0.1V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation.
All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Programmable CAS latency 2/2.5 (DDR200, 266, 333) and 3 (DDR400) supported Programmable burst length 2/4/8 with both sequential and interleave mode Internal four bank operat.

Other Datasheets by Hynix Semiconductor

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HY5DU561622CF - (HY5DU56xxxC(L)F) 256M DDR SDRAM
HY5DU561622CT - (HY5DU56xx22CT) 256M-P DDR SDRAM
HY5DU561622E - (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM
HY5DU561622EFP - (HY5DU561622EFP / HY5DU56822EFP) 256Mb DDR SDRAM
HY5DU561622ELFP - (HY5DU561622EFP / HY5DU56822EFP) 256Mb DDR SDRAM
HY5DU561622ELTP - (HY5DU56822E / HY5DU561622E) 256Mb DDR SDRAM

Published: Nov 7, 2006 |