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HY5DU561622DT Datasheet (hy5du56xx22dt) 256mb Ddr Sdram

Manufacturer: SK Hynix

Overview: .. 256Mb DDR SDRAM 256Mb DDR SDRAM HY5DU56422D(L)T HY5DU56822D(L)T HY5DU561622D(L)T This document is a general.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Key Features

  • ES VDD, VDDQ = 2.5V +/- 0.2V for DDR200, 266, 333 VDD, VDDQ = 2.6V +/- 0.1V for DDR400 All inputs and outputs are compatible with SSTL_2 interface Fully differential clock inputs (CK, /CK) operation.
  • All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock Programmable CAS latency 2/2.5 (DDR200, 266, 333) and 3 (DDR400) supported Programmable burst length 2/4/8 with both sequential and interleave mode Internal four bank operat.

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