HY5RS123235FP-12 Datasheet 512m (16mx32) Gddr3 Sdram

Manufacturer: SK Hynix

Overview: HY5RS123235FP 512M (16Mx32) GDDR3 SDRAM HY5RS123235FP This document is a general.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

and is subject to change without notice.

Hynix Semiconductor does not assume any responsibility for use of circuits described.

No patent licenses are implied.

2.2V +/-0.1V VDD/VDDQ power supply supports 900MHz 2.0V VDD/ VDDQ wide range min/max power supply supports 700/ 800MHz.
1.8V VDD/ VDDQ wide range min/max power supply supports 500 / 600MHz.
Single ended READ Strobe (RDQS) per byte Single ended WRITE Strobe (WDQS) per byte Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle.
Calibrated output driver Differential.