Datasheet4U Logo Datasheet4U.com

HY5V52F - 4Banks x 2M x 32bits Synchronous DRAM

Description

and is subject to change without notice.

Hynix does not assume any responsibility for use of circuits described.

No patent licenses are implied.

Features

  • Voltage : VDD, VDDQ 3.3V All device pins are compatible with LVTTL interface 90Ball FBGA with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM0,1,2 and 3.
  • Internal four banks operation.
  • Burst Read Single Write operation Programmable CAS Latency ; 2, 3 Clocks.
  • Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable.

📥 Download Datasheet

Datasheet preview – HY5V52F

Datasheet Details

Part number HY5V52F
Manufacturer Hynix Semiconductor
File Size 345.39 KB
Description 4Banks x 2M x 32bits Synchronous DRAM
Datasheet download datasheet HY5V52F Datasheet
Additional preview pages of the HY5V52F datasheet.

📁 Similar Datasheet

  • HY5-P - Current Transducers HY 5 to 25-P (LEM)
  • HY50-P - Current Transducer HY 50-P (LEM)
  • HY5002 - 1-chip composed of high-current totem pole (HAWYANG)
  • HY5012A - N-Channel Enhancement Mode MOSFET (HOOYI)
  • HY5012W - N-Channel Enhancement Mode MOSFET (HOOYI)
  • HY50P - Current Transducers/ HY 50-P/SP1 (LEM)
  • HY5100 - 2 Input / 3 Output Digital Delay Line (Hytek)
  • HY510N - PC POWER SUPPLY SUPERVISOR (HawYang)
  • HY5110A - N-Channel Enhancement Mode MOSFET (HUAYI)
  • HY5110NA2W - N-Channel Enhancement Mode MOSFET (HUAYI)
Other Datasheets by Hynix Semiconductor
  • HY5V52FP - 4Banks x 2M x 32bits Synchronous DRAM
  • HY5V52LF - 4Banks x 2M x 32bits Synchronous DRAM
  • HY5V52LFP - 4Banks x 2M x 32bits Synchronous DRAM
  • HY5V22F - 4 Banks x 1M x 32Bit Synchronous DRAM
  • HY5V22FP - 4 Banks x 1M x 32Bit Synchronous DRAM
  • HY5V22GF - 4 Banks x 1M x 32Bit Synchronous DRAM
  • HY5V22LF - 4 Banks x 1M x 32Bit Synchronous DRAM
  • HY5V22LFP - 4 Banks x 1M x 32Bit Synchronous DRAM

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Preliminary HY5V52(L)F(P) Series 4Banks x 2M x 32bits Synchronous DRAM Document Title 4Bank x 2M x 32bits Synchronous DRAM Revision History Revision No. 0.1 History Initial Draft Draft Date Jun. 2004 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / June. 2004 1 Preliminary HY5V52(L)F(P) Series 4Banks x 2M x 32bits Synchronous DRAM DESCRIPTION The Hynix HY5V52(L)F(P) series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52(L)F(P) is organized as 4banks of 2,097,152x32.
Published: |