Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Key Features
Voltage : VDD, VDDQ 3.3V All device pins are compatible with LVTTL interface 90Ball FBGA with 0.8mm of pin pitch All inputs and outputs referenced to positive edge of system clock Data mask function by DQM0,1,2 and 3.
Internal four banks operation.
Burst Read Single Write operation Programmable CAS Latency ; 2, 3 Clocks.
Auto refresh and self refresh 4096 Refresh cycles / 64ms Programmable.
Full PDF Text Transcription for HY5V52F (Reference)
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www.DataSheet4U.com Preliminary HY5V52(L)F(P) Series 4Banks x 2M x 32bits Synchronous DRAM Document Title 4Bank x 2M x 32bits Synchronous DRAM Revision History Revision N...
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Title 4Bank x 2M x 32bits Synchronous DRAM Revision History Revision No. 0.1 History Initial Draft Draft Date Jun. 2004 Remark Preliminary This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 0.1 / June. 2004 1 Preliminary HY5V52(L)F(P) Series 4Banks x 2M x 32bits Synchronous DRAM DESCRIPTION The Hynix HY5V52(L)F(P) series is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY5V52(L)F(P) is organized
HY5V52F Datasheet
