HY62CT08081E-DTI
Description
The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application.
Key Features
- Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup - 2.0V(min.) data retention
- Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) LL 10 20 20 Temperature (°C) 0~70(Normal) -25~85(Extended) -40~85(Industrial) Product Voltage No. (V) HY62CT08081E-C 5.0 HY62CT08081E-E 5.0 HY62CT08081E-I 5.0 Note
- Current value is max. Speed (ns) 55/70/85 55/70/85 55/70/85 Operation Current(mA) 10 10 10
